التفاصيل البيبلوغرافية
| العنوان: |
Evolution of structural order in germanium ion-implanted amorphous silicon layers. |
| المؤلفون: |
Cheng, S. L., Lin, H. H., He, J. H., Chiang, T. F., Yu, C. H., Chen, L. J., Yang, C. K., Wu, D. Y., Chien, S. C., Chen, W. C. |
| المصدر: |
Journal of Applied Physics; 7/15/2002, Vol. 92 Issue 2, p910, 4p, 3 Black and White Photographs, 2 Graphs |
| مصطلحات موضوعية: |
ELECTRONIC structure, GERMANIUM, AMORPHOUS semiconductors, TRANSMISSION electron microscopy |
| مستخلص: |
High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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