التفاصيل البيبلوغرافية
| العنوان: |
A High-Density Low On-Resistance Trench Lateral Power MOSFET With a Trench Bottom Source Contract. |
| المؤلفون: |
Fujishima, Naoto, Sugi, Akio, Kajiwara, Satomi, Matsubara, Kunio, Nagayasu, Yoshihiko, Salama, C. Andre T. |
| المصدر: |
IEEE Transactions on Electron Devices; Aug2002, Vol. 49 Issue 8, p1462, 7p, 6 Black and White Photographs, 8 Diagrams, 1 Chart, 3 Graphs |
| مصطلحات موضوعية: |
METAL oxide semiconductor field-effect transistors, SEMICONDUCTORS |
| مستخلص: |
Proposes an improved trench lateral power metal oxide semiconductor field effect transistors. Device structure; Fabrication process; Simulation results; Conclusion. |
| قاعدة البيانات: |
Complementary Index |
Full Text Finder