التفاصيل البيبلوغرافية
| العنوان: |
Investigation of ionized impurity scattering in GaAs and InP using hydrostatic pressure. |
| المؤلفون: |
Lancefield, D., Adams, A. R., Gunney, B. J. |
| المصدر: |
Applied Physics Letters; 1984, Vol. 45 Issue 10, p1121-1123, 3p |
| مصطلحات موضوعية: |
HYDROSTATIC pressure, ELECTRON scattering, FLUCTUATIONS (Physics), GAUSSIAN processes, PARTICLES (Nuclear physics) |
| مستخلص: |
The application of hydrostatic pressure to change the effective mass of conduction electrons has been used to investigate the electron scattering mechanisms in GaAs and InP over a wide range of impurity concentrations. It is observed that the Hall mobility decreases with increasing pressure and that, unexpectedly the effect increases with increasing impurity concentration. Analysis shows that, for pure material, good agreement is obtained between theory and experiment. However, for increased carrier concentrations this agreement is lost, indicating the incomplete nature of the standard theories of ionized impurity scattering. The discrepancy is tentatively associated with scattering from fluctuations in the correlated distribution of the ionized impurities which are taken here to be Gaussian in shape. [ABSTRACT FROM AUTHOR] |
|
Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.