Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions.

التفاصيل البيبلوغرافية
العنوان:	Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions.
المؤلفون:	Ha, Woo Jin, Chhajed, Sameer, Chavan, Ashonita, Lee, Jae-Hoon, Kim, Ki-Se, Kim, Jong Kyu
المصدر:	Physica Status Solidi (C); Mar2012, Vol. 9 Issue 3/4, p851-854, 4p
قاعدة البيانات:	Complementary Index

الوصف
تدمد:	18626351
DOI:	10.1002/pssc.201100487