دورية أكاديمية
Relaxation of interfacial stress and improved quality of heteroepitaxial 3C-SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C.
| العنوان: | Relaxation of interfacial stress and improved quality of heteroepitaxial 3C-SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C. |
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| المؤلفون: | Veprˇek, S., Kunstmann, Th., Volm, D., Meyer, B. K. |
| المصدر: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1997, Vol. 15 Issue 1, p10-17, 8p |
| قاعدة البيانات: | Complementary Index |
Find this article in full text from Scitation. | تدمد: | 07342101 |
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| DOI: | 10.1116/1.580482 |