دورية أكاديمية
Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon.
| العنوان: | Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon. |
|---|---|
| المؤلفون: | Loesing, R., Guryanov, G. M., Hunter, J. L., Griffis, D. P. |
| المصدر: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 1, p509-513, 5p |
| قاعدة البيانات: | Complementary Index |
Find this article in full text from Scitation. | تدمد: | 10711023 |
|---|---|
| DOI: | 10.1116/1.591222 |