التفاصيل البيبلوغرافية
| العنوان: |
On the evolution of GaInAs/GaAs strained epitaxial layers. |
| المؤلفون: |
Brafman, O., Fekete, D., Sarfaty, R. |
| المصدر: |
Journal of Applied Physics; 2/15/1992, Vol. 71 Issue 4, p1744, 4p, 3 Graphs |
| مصطلحات موضوعية: |
CRYSTAL defects, THIN films |
| مستخلص: |
Focuses on a study which found that in a highly lattice-mismatched heteroepitaxial growth, as critical thickness is reached, defects are formed within a thin layer at the surface and do not necessarily propagate to the interface. Tool for observing the stepwise release of the strain; Types of strain developed by the lattice mismatch; Material systems in which the strain was at least partly released. |
| قاعدة البيانات: |
Complementary Index |
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