التفاصيل البيبلوغرافية
| العنوان: |
Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices. |
| المؤلفون: |
Fleetwood, D. M., Winokur, P. S., Reber, R. A., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R., Riewe, L. C. |
| المصدر: |
Journal of Applied Physics; 5/15/1993, Vol. 73 Issue 10, p5058, 17p |
| مصطلحات موضوعية: |
METAL oxide semiconductors, ION traps, PHYSICAL & theoretical chemistry |
| مستخلص: |
Describes a simple nomenclature for defects on metal-oxide-semiconductor (MOS) devices. Outline of the revised nomenclature; Discussion of three classes of physical models of border traps; Details of the long-term buildup and annealing of radiation-induced trapped charge in non-radiation-hardened MOS transistors. |
| قاعدة البيانات: |
Complementary Index |
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