التفاصيل البيبلوغرافية
العنوان: |
p-on-n heterojunctions of (Hg,Cd)Te by molecular-beam epitaxy: Controlled silver doping and compositional grading. |
المؤلفون: |
Peterman, D. J., Wroge, M. L., Morris, B. J., Leopold, D. J., Broerman, J. G. |
المصدر: |
Journal of Applied Physics; 3/15/1988, Vol. 63 Issue 6, p1951, 4p, 6 Graphs |
مصطلحات موضوعية: |
MOLECULAR beam epitaxy, TELLURIUM |
مستخلص: |
Presents information on a study which identified a reliable p-type impurity dopant that can be used for molecular-beam epitaxy-(mercury, cadmium) tellurium layers. Experimental procedure; Silver doping; Grading profiles. |
قاعدة البيانات: |
Complementary Index |