دورية أكاديمية

p-on-n heterojunctions of (Hg,Cd)Te by molecular-beam epitaxy: Controlled silver doping and compositional grading.

التفاصيل البيبلوغرافية
العنوان: p-on-n heterojunctions of (Hg,Cd)Te by molecular-beam epitaxy: Controlled silver doping and compositional grading.
المؤلفون: Peterman, D. J., Wroge, M. L., Morris, B. J., Leopold, D. J., Broerman, J. G.
المصدر: Journal of Applied Physics; 3/15/1988, Vol. 63 Issue 6, p1951, 4p, 6 Graphs
مصطلحات موضوعية: MOLECULAR beam epitaxy, TELLURIUM
مستخلص: Presents information on a study which identified a reliable p-type impurity dopant that can be used for molecular-beam epitaxy-(mercury, cadmium) tellurium layers. Experimental procedure; Silver doping; Grading profiles.
قاعدة البيانات: Complementary Index
الوصف
تدمد:00218979
DOI:10.1063/1.341092