التفاصيل البيبلوغرافية
| العنوان: |
Leakage current analysis for InyGa1-yPzAs1-z/AlxGa1-xAs double heterostructure lasers. |
| المؤلفون: |
Lan, Sheng, Chan, Yuen-Chuen, Xu, Wan-Jing, Cui, De-Long, Yang, Cheng-Qing, Liu, Hong-Du |
| المصدر: |
Journal of Applied Physics; 12/1/1996, Vol. 80 Issue 11, p6355, 5p, 1 Chart, 8 Graphs |
| مصطلحات موضوعية: |
HETEROJUNCTIONS, CONDUCTION electrons, HETEROSTRUCTURES |
| مستخلص: |
Presents a study which analyzed the leakage current for In[suby]Ga[sub1] - [suby]P[subz]As[sub1] - [subz]/Al[subx]Ga[sub1] - [subx]As heterojunctions. Theoretical analysis on the valence bands; Energy band offset for the heterojunctions; Features of the leakage current. |
| قاعدة البيانات: |
Complementary Index |
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