التفاصيل البيبلوغرافية
| العنوان: |
Carbon-doped impurity induced layer disorder 0.98 μm lasers. |
| المؤلفون: |
Bylsma, R. B., Hobson, W. S., Lopata, J., Zydzik, G. J., Geva, M., Asom, M. T., Pearton, S. J., Thomas, P. M., Bridenbaugh, P. M., Washington, M. A., Roccasecca, D. D., Wilt, D. P. |
| المصدر: |
Journal of Applied Physics; 7/1/1994, Vol. 76 Issue 1, p590, 3p, 1 Black and White Photograph, 3 Graphs |
| مصطلحات موضوعية: |
CARBON, SEMICONDUCTOR doping, GALLIUM arsenide semiconductors, LASERS |
| مستخلص: |
Presents a study which fabricated high power carbon-doped indium gallium arsenide/aluminum gallium arsenide lasers using an impurity-induced layer disordering process to define the active region. Advantage of carbon doping; Results of the secondary ion mass spectrometry measurements; Conclusion. |
| قاعدة البيانات: |
Complementary Index |
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