التفاصيل البيبلوغرافية
| العنوان: |
Thermal annealing of light-induced defects in p-i-p and n-i-n hydrogenated amorphous silicon structures: Influence of hole and electron injection. |
| المؤلفون: |
Meaudre, M., Meaudre, R., Vignoli, S. |
| المصدر: |
Journal of Applied Physics; 6/1/1995, Vol. 77 Issue 11, p5702, 4p |
| مصطلحات موضوعية: |
ANNEALING of metals, SILICON |
| مستخلص: |
Investigates the thermal annealing of light-induced defects in p-i-p and n-i-n hydrogenated amorphous silicon. Rate equation for the defect density; Information on defect annealing in the intrinsic layer of p-i-p structures. |
| قاعدة البيانات: |
Complementary Index |
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