دورية أكاديمية

A DC model for asymmetric trapezoidal gate MOSFET's in...

التفاصيل البيبلوغرافية
العنوان: A DC model for asymmetric trapezoidal gate MOSFET's in...
المؤلفون: Wong, Shyh-Chyi, Hsu, Shyh-Yuan, Yeong-Her Wang, Mau-Phon Houng, Shih-Keng Cho
المصدر: IEEE Transactions on Electron Devices; Jul98, Vol. 45 Issue 7, p1459, 9p, 4 Black and White Photographs, 1 Diagram, 1 Chart, 8 Graphs
مصطلحات موضوعية: DIRECT currents, METAL oxide semiconductor field-effect transistors
مستخلص: Presents a study which examined the direct-current (DC) model for asymmetric trapezoidal gate (ATG) metal oxide semiconductor field-effect transistors (MOSFET). Methodology used in the study; Results of the study; Conclusions.
قاعدة البيانات: Complementary Index
الوصف
تدمد:00189383
DOI:10.1109/16.701476