التفاصيل البيبلوغرافية
| العنوان: |
Erratum: 'Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications' [Appl. Phys. Lett. 100, 233506 (2012)]. |
| المؤلفون: |
Misra, Abhishek, Waikar, Mayur, Gour, Amit, Kalita, Hemen, Khare, Manali, Aslam, Mohammed, Kottantharayil, Anil |
| المصدر: |
Applied Physics Letters; 9/17/2012, Vol. 101 Issue 12, p129902, 1p |
| مصطلحات موضوعية: |
METAL oxide semiconductors |
| مستخلص: |
A correction to the article "Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field affect device applications" that was published in September 2012 is presented. |
| قاعدة البيانات: |
Complementary Index |
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