Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well.

التفاصيل البيبلوغرافية
العنوان: Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well.
المؤلفون: Lifang Xu, D. Patel, C.S. Menoni, Jeng-Ya Yeh, J. Y. T. Huang, L. J. Mawst, Nelson Tansu
المصدر: LEOS 2006 - 19th Annual Meeting of the IEEE Lasers & Electro-Optics Society; 2006, p58-59, 2p
قاعدة البيانات: Complementary Index
الوصف
ردمك:9780780395558
DOI:10.1109/LEOS.2006.278835