مؤتمر
Fabrication of high quality ultra-thin HfO2 gate dielectric MOSFETs using deuterium anneal.
| العنوان: | Fabrication of high quality ultra-thin HfO2 gate dielectric MOSFETs using deuterium anneal. |
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| المؤلفون: | Rino Choi, Onishi, K., Chang Seok Kang, Gopalan, S., Renee Nieh, Kim, Y.H., Han, J.H., Krishnan, S., Hag-ju Cho, Shahriar, A., Lee, J.C. |
| المصدر: | Digest. International Electron Devices Meeting; 2002, p613-616, 4p |
| قاعدة البيانات: | Complementary Index |
Full Text Finder | ردمك: | 9780780374621 |
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| DOI: | 10.1109/IEDM.2002.1175914 |