التفاصيل البيبلوغرافية
| العنوان: |
Properties of interface states at Ta2O5/n-Si interfaces. |
| المؤلفون: |
Zhang, S.K., Fu, Z.W., Ke, L., Lu, F., Qin, Q.Z., Wang, Xun |
| المصدر: |
Journal of Applied Physics; 7/1/1998, Vol. 84 Issue 1, p335, 4p, 1 Chart, 5 Graphs |
| مصطلحات موضوعية: |
INTERFACES (Physical sciences), SCIENTIFIC experimentation |
| مستخلص: |
Provides information on a study investigating the properties of interface states at Ta2O5/n-Si interfaces using capacitance-voltage and deep-level transient spectroscopy (DLTS) measurements. Methodology used to conduct the study; Values of flatband voltages Vtb; Information on the hysteresis behaviors of C-V curves; Findings of the study. |
| قاعدة البيانات: |
Complementary Index |
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