التفاصيل البيبلوغرافية
| العنوان: |
Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 × 2 surface: A high-resolution core-level photoemission study. |
| المؤلفون: |
Pi, T. W., Lin, H. Y., Chiang, T. H., Liu, Y. T., Wertheim, G. K., Kwo, J., Hong, M. |
| المصدر: |
Journal of Applied Physics; May2013, Vol. 113 Issue 20, p203703, 5p, 1 Diagram, 4 Graphs |
| مصطلحات موضوعية: |
ATOMIC layer deposition, MOLECULAR beam epitaxy, CHEMICAL bonds, ORGANOALUMINUM compounds, ATOMS |
| مستخلص: |
In atomic-layer deposition (ALD), organoaluminum as trimethyl-aluminum (TMA) on a freshly molecular beam epitaxy grown In0.20Ga0.80As(001)-4 × 2 surface has three forms: Al bonding with 1, 2, and 3 methyl groups. The ALD method of using one pulse (0.1 s) of TMA plus one pulse (0.1 s) of water was ineffective in passivating the surface, as demonstrated by the increased intensity of the reacted surface components with high numbers of pulses. The intact TMA was physisorbed on the trough In atoms, while the methyl-deficient precursors are either bridged with two As atoms or on the row-edge As atoms. After the water pulse on the TMA-covered surface, a bond in the bridged As atoms was scissored off to produce the As-Al-CH3 and As-OH, and the physisorbed TMA was unaffected. TMA removed some row In atoms, which allowed the In and Ga atoms in the second layer to form OH bonds after the water exposure. The appearance of the As-OH bonds may cause interfacial defect density (Dit) a peak at the midgap. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.