دورية أكاديمية

A 1.8-GHz High-Efficiency 34-dBm Silicon Bipolar Power Amplifier.

التفاصيل البيبلوغرافية
العنوان: A 1.8-GHz High-Efficiency 34-dBm Silicon Bipolar Power Amplifier.
المؤلفون: Carrara, Francesco, Scuderi, Antonino, Biondi, Tonio, Palmisano, Giuseppe
المصدر: IEEE Transactions on Microwave Theory & Techniques; Dec2002, Vol. 50 Issue 12, p2963, 8p, 4 Black and White Photographs, 6 Diagrams, 3 Charts, 9 Graphs
مصطلحات موضوعية: POWER amplifiers, BIPOLAR transistors, LOW voltage systems, SILICON
مستخلص: Investigates the low-voltage power capabilities of a low-cost high-performance silicon bipolar amplifier. Optimization of the emitter finger layout; Effect of the emitter distributed resistance on the current capability of long-emitter bipolar transistors; Derivation of an analytical model for a proper device design.
قاعدة البيانات: Complementary Index
الوصف
تدمد:00189480
DOI:10.1109/TMTT.2002.805189