التفاصيل البيبلوغرافية
العنوان: |
A 1.8-GHz High-Efficiency 34-dBm Silicon Bipolar Power Amplifier. |
المؤلفون: |
Carrara, Francesco, Scuderi, Antonino, Biondi, Tonio, Palmisano, Giuseppe |
المصدر: |
IEEE Transactions on Microwave Theory & Techniques; Dec2002, Vol. 50 Issue 12, p2963, 8p, 4 Black and White Photographs, 6 Diagrams, 3 Charts, 9 Graphs |
مصطلحات موضوعية: |
POWER amplifiers, BIPOLAR transistors, LOW voltage systems, SILICON |
مستخلص: |
Investigates the low-voltage power capabilities of a low-cost high-performance silicon bipolar amplifier. Optimization of the emitter finger layout; Effect of the emitter distributed resistance on the current capability of long-emitter bipolar transistors; Derivation of an analytical model for a proper device design. |
قاعدة البيانات: |
Complementary Index |