التفاصيل البيبلوغرافية
| العنوان: |
A Study of Stress-Induced p[sup +]/n Salicided Junction Leakage Failure and Optimized Process Conditions for Sub-0.15-µm CMOS Technology. |
| المؤلفون: |
Joo-Hyoung Lee, Sung-Hyung Park, Key-Min Lee, Ki-Seok Youn, Young-Jin Park, Chel-Jong Choi, Tae-Yeon Seong, Hi-Deok Lee |
| المصدر: |
IEEE Transactions on Electron Devices; Nov2002, Vol. 49 Issue 11, p1985, 8p, 11 Black and White Photographs, 2 Diagrams, 15 Graphs |
| مصطلحات موضوعية: |
COMPLEMENTARY metal oxide semiconductors, SEMICONDUCTOR junctions |
| مستخلص: |
Clarifies that mechanical stress combined with shallower junction at the active edge is the main cause of junction leakage current failure of shallow p[sup +]/n salicided junctions for sub-0.15 micrometer complementary metal oxide semiconductors technology. Finding that the application of a shallow trench isolation (STI), top corner rounding process suppresses the mechanical stress of STI top corner. |
| قاعدة البيانات: |
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