التفاصيل البيبلوغرافية
| العنوان: |
Investigation of Characteristics of AlO/ n-InGaAs ( x = 0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures. |
| المؤلفون: |
Trinh, Hai-Dang, Lin, Yueh-Chin, Kuo, Chien-I, Chang, Edward, Nguyen, Hong-Quan, Wong, Yuen-Yee, Yu, Chih-Chieh, Chen, Chi-Ming, Chang, Chia-Yuan, Wu, Jyun-Yi, Chiu, Han-Chin, Yu, Terrence, Chang, Hui-Cheng, Tsai, Joseph, Hwang, David |
| المصدر: |
Journal of Electronic Materials; Aug2013, Vol. 42 Issue 8, p2439-2444, 6p, 6 Graphs |
| مصطلحات موضوعية: |
METAL oxide semiconductors, CAPACITANCE-voltage characteristics, HYSTERESIS, X-ray photoelectron spectroscopy, SURFACE preparation |
| مستخلص: |
The electrical properties of AlO/ n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage ( C- V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in AlO. With higher In content, shorter minority-carrier response time and smaller C- V hysteresis are observed. The reduction of C- V hysteresis might be related to the reduction of Ga-bearing oxides in AlO/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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