التفاصيل البيبلوغرافية
| العنوان: |
Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing. |
| المؤلفون: |
Altermatt, Pietro P., Schenk, Andreas, Geelhaar, Frank, Heiser, Gernot |
| المصدر: |
Journal of Applied Physics; 2/1/2003, Vol. 93 Issue 3, p1598, 7p, 1 Chart, 6 Graphs |
| مصطلحات موضوعية: |
SEMICONDUCTORS, SILICON |
| مستخلص: |
The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is n[sub i] = 1.00 × 10[sup 10] cm[sup -3]. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sprout and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was tow (10[sup 14] to 10[sup 16] cm[sup -3]). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining n[sub i] = 9.65 × 10[sup 9] cm[sup -3] at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of n[sub i] are resolved. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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