التفاصيل البيبلوغرافية
| العنوان: |
Carrier interactions and porosity initiated reversal of temperature dependence of thermal conduction in nanoscale tin films. |
| المؤلفون: |
Kaul, Pankaj B., Prakash, Vikas |
| المصدر: |
Journal of Applied Physics; 2014, Vol. 115 Issue 2, p1-12, 12p, 1 Color Photograph, 2 Charts, 9 Graphs |
| مصطلحات موضوعية: |
NANOFILMS, TIN research, THERMAL conductivity, POROSITY, PHYSICS research |
| مستخلص: |
Recently, tin has been identified as an attractive electrode material for energy storage/conversion technologies. Tin thin films have also been utilized as an important constituent of thermal interface materials in thermal management applications. In this regards, in the present paper, we investigate thermal conductivity of two nanoscale tin films, (i) with thickness 500 ± 50 nm and 0.45% porosity and (ii) with thickness 100 ± 20 nm and 12.21% porosity. Thermal transport in these films is characterized over the temperature range from 40K-310K, using a three-omega method for multilayer configurations. The experimental results are compared with analytical predictions obtained by considering both phonon and electron contributions to heat conduction as described by existing frequency-dependent phenomenological models and BvK dispersion for phonons. The thermal conductivity of the thicker tin film (500 nm) is measured to be 46.2W/m-K at 300K and is observed to increase with reduced temperatures; the mechanisms for thermal transport are understood to be governed by strong phonon-electron interactions in addition to the normal phonon-phonon interactions within the temperature range 160K-300K. In the case of the tin thin film with 100 nm thickness, porosity and electron-boundary scattering supersede carrier interactions, and a reversal in the thermal conductivity trend with reduced temperatures is observed; the thermal conductivity falls to 1.83W/m-K at 40K from its room temperature value of 36.1W/m-K. In order to interpret the experimental results, we utilize the existing analytical models that account for contributions of electron-boundary scattering using the Mayadas-Shatzkes and Fuchs-Sondheimer models for the thin and thick films, respectively. Moreover, the effects of porosity on carrier transport are included using a previous treatment based on phonon radiative transport involving frequency-dependent mean free paths and the morphology of the nanoporous channels. The systematic modeling approach presented in here can, in general, also be utilized to understand thermal transport in semi-metals and semiconductor nano-porous thin films and/or phononic nanocrystals.V 2014 AIP Publishing LLC. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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