التفاصيل البيبلوغرافية
| العنوان: |
Effect of InxGa1−xN “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition. |
| المؤلفون: |
Wei-Ning, Qian, Shi-Chen, Su, Hong, Chen, Zi-Guang, Ma, Ke-Bao, Zhu, Miao, He, Ping-Yuan, Lu, Geng, Wang, Tai-Ping, Lu, Chun-Hua, Du, Qiao, Wang, Wen-Bo, Wu, Wei-Wei, Zhang |
| المصدر: |
Chinese Physics B; Oct2013, Vol. 22 Issue 10, p106106-106110, 5p |
| مصطلحات موضوعية: |
SURFACE morphology, SURFACE structure, BUFFER layers, INDIUM, ORGANOMETALLIC compounds, CHEMICAL vapor deposition |
| مستخلص: |
In this paper we report on the effect of an InxGa1−xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1−xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations. [ABSTRACT FROM AUTHOR] |
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