التفاصيل البيبلوغرافية
| العنوان: |
Structural stability and electrical properties of AlB2-type MnB2 under high pressure. |
| المؤلفون: |
Xiang-Xu, Meng, Jing, Fan, Kuo, Bao, Fang-Fei, Li, Xiao-Li, Huang, Yan, Li, Fu-Bo, Tian, De-Fang, Duan, Xi-Lian, Jin, Pin-Wen, Zhu, Zhi, He, Qiang, Zhou, Chun-Xiao, Gao, Bing-Bing, Liu, Tian, Cui |
| المصدر: |
Chinese Physics B; Jan2014, Vol. 23 Issue 1, p016102-016106, 5p |
| مصطلحات موضوعية: |
TRANSITION metal compounds, X-ray diffraction, ELECTRICAL resistivity, DIAMOND anvil cell, HIGH pressure (Science) |
| مستخلص: |
The structural stability and electrical properties of AlB2-type MnB2 were studied based on high pressure angle-dispersive x-ray diffraction, in situ electrical resistivity measured in a diamond anvil cell (DAC) and first-principles calculations under high pressure. The x-ray diffraction results show that the structure of AlB2-type MnB2 remains stable up to 42.6 GPa. From the equation of state of MnB2, we obtained a bulk modulus value of 169.9±3.7 GPa with a fixed pressure derivative of 4, which indicates that AlB2-type MnB2 is a hard and incompressible material. The electrical resistance undergoes a transition at about 19.3 GPa, which can be explained by a transition of manganese 3d electrons from localization to delocalization under high pressure. [ABSTRACT FROM AUTHOR] |
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