التفاصيل البيبلوغرافية
| العنوان: |
Examination of hot-carrier stress induced degradation on fin field-effect transistor. |
| المؤلفون: |
Yi-Lin Yang, Wenqi Zhang, Tzu-Sung Yen, Jia-Jian Hong, Jie-Chen Wong, Chao-Chen Ku, Tai-Hsuan Wu, Tzuo-Li Wang, Chien-Yi Li, Bing-Tze Wu, Shih-Hung Lin, Wen-Kuan Yeh |
| المصدر: |
Applied Physics Letters; 2/24/2014, Vol. 104 Issue 8, p1-3, 3p, 1 Diagram, 3 Graphs |
| مصطلحات موضوعية: |
HOT carriers, FIELD-effect transistors, THRESHOLD voltage, IMPACT ionization, ELECTRON traps, STRAY currents |
| مستخلص: |
Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the VTH shift was largest at VG = 0.3 VD, indicating that the VTH shift was dominated by interface state generation. Although the strongest impact ionization occurred at VG = VD, the VTH shift was mainly caused by electron trapping resulting from a large gate leakage current. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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