التفاصيل البيبلوغرافية
| العنوان: |
Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals. |
| المؤلفون: |
Yen Chou, Hsiang-Wei Li, Yu-Feng Yin, Yu-Ting Wang, Yen-Chen Lin, Da-Wei Lin, Yuh-Renn Wu, Hao-Chung Kuo, Jian Jang Huang |
| المصدر: |
Journal of Applied Physics; 2014, Vol. 115 Issue 19, p193107-1-193107-5, 5p, 2 Diagrams, 1 Chart, 4 Graphs |
| مصطلحات موضوعية: |
PHOTONIC crystals, GALLIUM nitride, LIGHT emitting diodes, ELECTROLUMINESCENT devices, OPTICAL diffraction, ELECTROMAGNETIC fields |
| مستخلص: |
Fabricating photonic crystals (PhCs) on GaN based non-polar light emitting diodes (LEDs) is an effective way to increase light extraction and meanwhile to preserve or improve polarization ratio. In this work, a-plane GaN LEDs with two-dimensional PhCs were demonstrated. With the E // m polarized modes (which mean the optical polarization with the electric field parallel to m-axis) as the target of diffraction, we matched E//m modes to the photonic bands and aligned E//c modes to fall within the photonic band gap. The results show stronger E//m but weaker E//c mode diffractions on both c- and m-axes. At the vertical direction, the polarization ratio is enhanced from 45.8% for the planar device to 52.3% for the LEDs with PhCs. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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