التفاصيل البيبلوغرافية
| العنوان: |
Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy. |
| المؤلفون: |
Swaminathan, V., Asom, M. T., Livescu, G., Geva, M., Stevie, F. A., Pearton, S. J., Lopata, J. |
| المصدر: |
Applied Physics Letters; 12/31/1990, Vol. 57 Issue 27, p2928, 3p |
| مصطلحات موضوعية: |
GALLIUM arsenide, HYDROGEN, MOLECULAR beam epitaxy |
| مستخلص: |
Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy is studied. Just as in uniformily Si-doped GaAs, exposure of the δ-doped material to a low frequency (30 kHz) hydrogen plasma at 250 °C for 30 min deactivates the Si donors in the δ spikes. For samples with Si doping of (1–6)×1018 cm-3, carrier concentration in the spikes decreased by nearly three orders of magnitude following hydrogenation. Secondary-ion mass spectrometric analysis of deuterated samples confirmed trapping of deuterium in the Si-doped spikes. Consistent with the deactivation of Si donors following hydrogenation, changes were observed in the near-band edge luminescence spectrum at 4.2 K, which showed in the hydrogenated sample the absence of Burstein–Moss shift that was observed in the as-grown sample. This hydrogen-induced passivation of Si donors in the δ spikes can be of benefit in selectively deactivating donor atoms in device applications, and also provide a method for tailoring the hydrogen distribution in an epitaxial structure. [ABSTRACT FROM AUTHOR] |
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