دورية أكاديمية
Reducing the β‑Ga2O3 Epitaxy Temperature to 240 °C via Atomic Layer Plasma Processing.
| العنوان: | Reducing the β‑Ga |
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| المؤلفون: | Ilhom, Saidjafarzoda, Mohammad, Adnan, Grasso, John, Willis, Brian G., Okyay, Ali K., Biyikli, Necmi |
| المصدر: | ACS Applied Electronic Materials; 1/24/2023, Vol. 5 Issue 1, p335-343, 9p |
| قاعدة البيانات: | Supplemental Index |
Find this issue from the American Chemical Society | تدمد: | 26376113 |
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| DOI: | 10.1021/acsaelm.2c01353 |