التفاصيل البيبلوغرافية
| العنوان: |
Impact Ionization and High-Field Electron Transport in GaN. |
| المؤلفون: |
Saraniti, M., Ravaioli, U., Kuligk, A., Fitzer, N., Redmer, R. |
| المصدر: |
Nonequilibrium Carrier Dynamics in Semiconductors; 2006, p139-142, 4p |
| مستخلص: |
Ab initio band structure calculations were performed for GaAs, GaN, and ZnS within density functional theory to determine the impact ionization rate and the high-field electron transport characteristics. The drift velocity, mean kinetic energy, valley populations, and the ionization coefficient are gained from full-band ensemble Monte Carlo simulations. A pronounced influence of the band structure is found for all materials. Results are shown here for GaN. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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