التفاصيل البيبلوغرافية
| العنوان: |
High-AR Etch Advances. (cover story) |
| المؤلفون: |
Welch, Steven, Keswick, Kathryn, Stout, Phillip, Jong Mun Kim, Wonseok Lee, Ying, Chris, Dean, Kenny, Hun Sang Kim, Pu, Bryan |
| المصدر: |
Semiconductor International; Feb2009, Vol. 32 Issue 2, p18-22, 4p |
| مصطلحات موضوعية: |
DYNAMIC random access memory, COMPUTER storage devices, SEMICONDUCTORS, SEMICONDUCTOR industry, INTEGRATED circuits industry, RANDOM access memory |
| مستخلص: |
The article focuses on the development of high-aspect ratio (HAR) structures to improve capacitor storage performance in dynamic random access memory (DRAM) devices. It states that the semiconductor industry's challenge is to develop high-yield HAR etch processes. The HAR etch process is described in detail. To achieve good electrical performance, top and bottom critical dimension (CD) control should reportedly be managed. |
| قاعدة البيانات: |
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