التفاصيل البيبلوغرافية
| العنوان: |
Synthesis of Resists Containing a Photoacid Generator Group for Atomic Force Microscope Lithography |
| المؤلفون: |
Park, Sang Wook, Yoon, Hyun Jin, Oh, Hee Young, Kim, Yong Il, Kwun, Gi Jin, Lee, Hai Won |
| المصدر: |
Diffusion and Defect Data Part B: Solid State Phenomena; March 2007, Vol. 121 Issue: 1 p697-700, 4p |
| مستخلص: |
Photoacid generators (PAGs) have been widely used as a key component in a chemically amplified photoresist system. The PAG monomer containing an arylsulfonium triflate group was synthesized and was polymerized with benzyl methacrylates. The molecular weight and the content of PAG were controlled to improve thermal stability and sensitivity for atomic force microscope lithography. The fabrication of anodization patterns, which can be enhanced by addition of PAG unit to resist, was achieved at the low bias voltage and the high speed of AFM patterning. The physical properties of resists and lithographic factors affecting the high speed AFM lithography will be discussed. |
| قاعدة البيانات: |
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