دورية
High-power semiconductor 0.89 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
| العنوان: | High-power semiconductor 0.89 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures |
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| المؤلفون: | Bulaev, P.V., Marmalyuk, A.A., Padalitsa, A.A., Nikitin, D.B., Petrovskii, A.V., Zalevskii, I.D., Konyaev, V.P., Os'kin, V.V., Zverkov, M.V., Simakov, V.A., Zverev, G.M. |
| المصدر: | Quantum Electronics; May 20, 2002, Vol. 32 Issue: 3 p213-215, 3p |
| مستخلص: | Heterostructure lasers with a separate electronic and optical confinement based on strained quantum-well structures with single and double InGaAs quantum wells and different waveguide parameters are studied. The heterostructure design and technological conditions of the quantum-well growth are optimised to increase the output power and reduce the laser emission divergence. Semiconductor lasers are fabricated with a cw output power as high as 4 W and the emission divergence of less than 30° in the plane perpendicular to the p n junction plane. The pulsed output power of these lasers is limited by the catastrophycal damage of mirrors at a linear power density of 3000 W cm-1. |
| قاعدة البيانات: | Supplemental Index |
| تدمد: | 10637818 14684799 |
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