التفاصيل البيبلوغرافية
| العنوان: |
Electron mobilities in MOVPE-grown ZnSe quantum wells |
| المؤلفون: |
Drechsler, M., Hofmann, D.M., Volm, D., Stadler, W., Steude, G., Meyer, B.K., Taudt, W., Söllner, J., Heuken, M. |
| المصدر: |
Journal of Crystal Growth; February 1996, Vol. 159 Issue: 1-4 p410-413, 4p |
| مستخلص: |
We studied ZnSe single quantum wells with well widths from 4 to 1 nm by optically detected cyclotron resonance (ODCR). In the samples grown by metal organic vapour phase epitaxy, where the residual shallow donor concentration is still of the order of mid 1016cm−3, we find maximum electron mobilities of 46 000 cm2/V·s at low temperatures. The mechanism causing the cyclotron resonances to be observed in the luminescence is dominantly an energy transfer by heating the crystal lattice. |
| قاعدة البيانات: |
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