New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures

التفاصيل البيبلوغرافية
العنوان: New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures
المؤلفون: Wang-Ratkovic, J., Lacoe, R. C., MacWilliams, K., Song, M., Brown, S., Yabiku, G.
المصدر: Microelectronics Reliability; 1997, Vol. 37 Issue: 10 p1747-1754, 8p
قاعدة البيانات: Supplemental Index
الوصف
تدمد:00262714
DOI:10.1016/S0026-2714(97)00153-4