دورية
TSD Reduction by RAF (Repeated a-Face) Growth Method
| العنوان: | TSD Reduction by RAF (Repeated a-Face) Growth Method |
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| المؤلفون: | Urakami, Yasushi, Gunjishima, Itaru, Yamaguchi, Satoshi, Kondo, Hiroyuki, Hirose, Fusao, Adachi, Ayumu, Onda, Shoichi |
| المصدر: | Materials Science Forum; May 2012, Vol. 717 Issue: 1 p9-12, 4p |
| مستخلص: | A reduction in threading screw dislocation (TSD) density in 4H-SiC (silicon carbide) crystal is required for SiC power devices. In this study, TSD’s transformation by the RAF (repeated a-face) growth method [1] is observed by transmission X-ray topography (g=0004) of the cross-section of the crystal. Increasing the number of repetitions of a-face growth and offsetting c-face growth to an angle of several degrees reduce TSDs. TSD density is reduced to 1.3 TSD/cm2. The RAF growth method is very effective towards growing high quality SiC crystals. |
| قاعدة البيانات: | Supplemental Index |
| تدمد: | 02555476 16629752 |
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| DOI: | 10.4028/www.scientific.net/MSF.717-720.9 |