دورية
Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO~2 films
| العنوان: | Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO~2 films |
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| المؤلفون: | Seol, K. S., Karasawa, T., Ohki, Y., Nishikawa, H., Takiyama, M. |
| المصدر: | Microelectronic Engineering; 1997, Vol. 36 Issue: 1 p193-196, 4p |
| قاعدة البيانات: | Supplemental Index |
Full Text Finder | تدمد: | 01679317 |
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| DOI: | 10.1016/S0167-9317(97)00046-4 |