Spontaneous Radiation Energy of Current Filaments in GaAs Photoconductive Semiconductor Switches

التفاصيل البيبلوغرافية
العنوان: Spontaneous Radiation Energy of Current Filaments in GaAs Photoconductive Semiconductor Switches
المؤلفون: Liu, Hong, Zheng, Li, Yang, Hong Jun, Yang, Wei, Zheng, Yong Lin
المصدر: Applied Mechanics and Materials; September 2013, Vol. 423 Issue: 1 p2659-2662, 4p
مستخلص: The spontaneous radiation energy of the current filaments in high gain GaAs photoconductive semiconductor switches (PCSS) is quantificationally analyzed. The spontaneous radiation formula of the current filaments was derived. The concept of the distribution function of the radiation intensity dependent on radiation wavelength was first introduced in GaAs samples. The radiative recombination coefficients of four peak wavelengths were estimated by the statistical-physical method in high gain GaAs PCSS. Calculated according to the radiative recombination coefficient of 890 nm radiation, the spontaneous radiation energies are consistent with the experimental observations. This explains the observations about optical output energy versus filament current.
قاعدة البيانات: Supplemental Index
الوصف
تدمد:16609336
16627482
DOI:10.4028/www.scientific.net/AMM.423-426.2659