دورية
Control of Doping Level in Semiconductors viaSelf-Limited Grafting of Phosphorus End-Terminated Polymers
| العنوان: | Control of Doping Level in Semiconductors viaSelf-Limited Grafting of Phosphorus End-Terminated Polymers |
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| المؤلفون: | Perego, Michele, Seguini, Gabriele, Arduca, Elisa, Nomellini, Andrea, Sparnacci, Katia, Antonioli, Diego, Gianotti, Valentina, Laus, Michele |
| المصدر: | ACS Nano; January 2018, Vol. 12 Issue: 1 p178-186, 9p |
| مستخلص: | An effective bottom-up technology for precisely controlling the amount of dopant atoms tethered on silicon substrates is presented. Polystyrene and poly(methyl methacrylate) polymers with narrow molecular weight distribution and end-terminated with a P-containing moiety were synthesized with different molar mass. The polymers were spin coated and subsequently end-grafted onto nondeglazed silicon substrates. P atoms were bonded to the surface during the grafting reaction, and their surface density was set by the polymer molar mass, according to the self-limiting nature of the “grafting to” reaction. Polymeric material was removed by O2plasma hashing without affecting the tethered P-containing moieties on the surface. Repeated cycles of polymer grafting followed by plasma hashing led to a cumulative increase, at constant steps, in the dose of P atoms grafted to the silicon surface. P injection in the silicon substrate was promoted and precisely controlled by high-temperature thermal treatments. Sheet resistance measurements demonstrated effective doping of silicon substrate. |
| قاعدة البيانات: | Supplemental Index |
Find this issue from the American Chemical Society | تدمد: | 19360851 1936086X |
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| DOI: | 10.1021/acsnano.7b05459 |