دورية
A Study on the Removal Method of Si Residue during Si Wet Etching
| العنوان: | A Study on the Removal Method of Si Residue during Si Wet Etching |
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| المؤلفون: | Ko, Kihyung, Jeon, Hayoung, Song, Myunggeun, Han, Jeongnam, Yoon, Boun, Choi, Siyoung, Kang, Hokyu, Lee, Chilgi, Kim, Taesung |
| المصدر: | ECS Transactions; August 2013, Vol. 58 Issue: 6 p57-61, 5p |
| مستخلص: | In this paper, problems that can occur during the poly-Si wet etch in the semiconductor process are used and methods to solve these problems are introduced. In order to prevent the substrate from being damaged, we generally use a wet etching process that uses alkali solutions rather than dry etching process. If poly si residues remain after etch process in this critical step, it bring about a huge impact on the wafer yield. |
| قاعدة البيانات: | Supplemental Index |
| تدمد: | 19385862 19386737 |
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