Invited PaperNext generation focal plane array for infrared astronomy

التفاصيل البيبلوغرافية
العنوان: Invited PaperNext generation focal plane array for infrared astronomy
المؤلفون: Kozlowski, L. J., Vural, K., Cabelli, S. A., Chen, A., Cooper, D. E., Bostrup, G., Cabelli, C., Hodapp, K., Hall, D., Kleinhans, W. E., Kozlowski, L. J., Vural, K., Cabelli, S. A., Chen, A., Cooper, D. E., Bostrup, G., Cabelli, C., Hodapp, K., Hall, D., Kleinhans, W. E.
المصدر: Journal de Physique IV - Proceedings; June 1998, Vol. 8 Issue: 1 pPr3-141-Pr3-145, 1413143p
مستخلص: A short wavelength 2048x2048 focal plane array (FPA) with 18 µm pixel pitch is being developed for infrared astronomy. The HAWAII-2 FPA will be a hybrid comprising a HgCdTe-based detector array flip-chip bonded to a CMOS silicon multiplexer through indium interconnects. The first FPAs will have cut-off wavelength of 2.5 µm, but the readout is being designed to service detector cutoff wavelengths beyond 15 µm. The 18 µm pixel pitch was selected to accommodate both reasonable telescope optics and fabrication of the large readout (=40x40mm2) using world-class sub-micron photolithography to maximize yield of high quality devices. Defect-free multiplexer yield >5% is expected in the first lot which will be fabricated on Rockwell's commercial production line in 0,8 µm CMOS. The HgCdTe photovoltaic detector arrays will be fabricated on ≥3" diameter sapphire or silicon wafers. We also report the latest 1024x1024 FPA results with 2.5 µm HgCdTe detectors on sapphire substrates.
قاعدة البيانات: Supplemental Index
الوصف
تدمد:11554339
17647177
DOI:10.1051/jp4:1998332