دورية
Suppressing the formation of GeOxby doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact
| العنوان: | Suppressing the formation of GeOxby doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact |
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| المؤلفون: | Huang, Zhiwei, Li, Cheng, Lin, Guangyang, Lai, Shumei, Wang, Chen, Huang, Wei, Wang, Jianyuan, Chen, Songyan |
| المصدر: | Applied Physics Express (APEX); February 2016, Vol. 9 Issue: 2 p021301-021301, 1p |
| مستخلص: | Tin (Sn) was introduced into Ge for the preparation of a thin GeSnOxby thermal oxidation, which could strongly modulate the Schottky barrier height of metal/n-Ge contacts. A small amount of Sn doping in Ge could effectively suppress the formation of GeOxduring oxidation, alleviating the Fermi-level pinning effect in Ge. This resulted in the strong correlation between the Schottky barrier heights of metal/GeSnOx/n-Ge contacts and metal work functions. The ohmic Al/n-Ge contacts and the extremely low leakage current density of the HfO2/Ge structure achieved by the simple thermal oxidation of a Sn-doped Ge surface suggested the potential of this method in the fabrication of Ge-based devices. |
| قاعدة البيانات: | Supplemental Index |
Full Text Finder | تدمد: | 18820778 18820786 |
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| DOI: | 10.7567/APEX.9.021301 |