دورية
Wet Chemical Etching Behavior of Ga(Al)As and In(Ga)P(As) Layers
| العنوان: | Wet Chemical Etching Behavior of Ga(Al)As and In(Ga)P(As) Layers |
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| المؤلفون: | Franz, Gerhard, Charlotte Hoyler, Charlotte Hoyler, Dagmar Sacher, Dagmar Sacher |
| المصدر: | Japanese Journal of Applied Physics; November 1991, Vol. 30 Issue: 11 p2693-2693, 1p |
| مستخلص: | The chemical etching behavior of Ga(Al)As and In(Ga)P(As) containing sandwich layers grown by metalorganic vapor phase epitaxy has been investigated using various etching solutions. The chemical background is described by a potential-pH diagram. Activation energies obtained were between 0.28 and 0.46 eV. The inclination angle of the etched walls is mainly 55°. In both the systems, a transition from a reaction-rate limited process to a diffusion-rate-limited one is observed. In InP, a reactive intermediate with an inclination angle of 45° could be trapped. |
| قاعدة البيانات: | Supplemental Index |
Full Text Finder | تدمد: | 00214922 13474065 |
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| DOI: | 10.1143/JJAP.30.2693 |