دورية
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures
العنوان: | Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric Hf |
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المؤلفون: | Lo, Chieh, Chang, Shu-Chieh, Lin, Kun-Tao, Chen, Chung-Kuang, Chang, Chen-Feng, Zhang, Feng-Shuo, Lu, Zong-Han, Chao, Tien-Sheng |
المصدر: | IEEE Electron Device Letters; 2023, Vol. 44 Issue: 6 p883-886, 4p |
مستخلص: | We fabricated FeRAM and FeFET with a bilayer HfxZr1-xO2 (HZO), which comprises 5-nm-thick antiferroelectric HZO and 5-nm-thick ferroelectric HZO. Higher orthorhombic phase and large grain size were shown in grazing-incidence x-ray diffraction and TEM results, respectively. By using low ALD temperature, the leakage current ( |
قاعدة البيانات: | Supplemental Index |
تدمد: | 07413106 15580563 |
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DOI: | 10.1109/LED.2023.3268179 |