Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures

التفاصيل البيبلوغرافية
العنوان:	Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures
المؤلفون:	Lo, Chieh, Chang, Shu-Chieh, Lin, Kun-Tao, Chen, Chung-Kuang, Chang, Chen-Feng, Zhang, Feng-Shuo, Lu, Zong-Han, Chao, Tien-Sheng
المصدر:	IEEE Electron Device Letters; 2023, Vol. 44 Issue: 6 p883-886, 4p
مستخلص:	We fabricated FeRAM and FeFET with a bilayer HfxZr1-xO2 (HZO), which comprises 5-nm-thick antiferroelectric HZO and 5-nm-thick ferroelectric HZO. Higher orthorhombic phase and large grain size were shown in grazing-incidence x-ray diffraction and TEM results, respectively. By using low ALD temperature, the leakage current ( $ < 3\times 10^{-{5}}$ A/cm2 under ±2V), gate control ability, the memory window (>1.5V) andthe endurance (107 cycles) have been improved. These results suggest that a low atomic layer deposition temperature is a promising process for use in non-volatile memory devices.
قاعدة البيانات:	Supplemental Index

الوصف
تدمد:	07413106 15580563
DOI:	10.1109/LED.2023.3268179