التفاصيل البيبلوغرافية
| العنوان: |
62‐1: Distinguished Student Paper:Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology |
| المؤلفون: |
Schellander, Yannick, Winter, Marius, Schamber, Maurice, Munkes, Fabian, Schalberger, Patrick, Kuebler, Harald, Pfau, Tilman, Fruehauf, Norbert |
| المصدر: |
SID Symposium Digest of Technical Papers; June 2023, Vol. 54 Issue: 1 p880-883, 4p |
| مستخلص: |
In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRESand a good noise equivalent power value NEP. |
| قاعدة البيانات: |
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