التفاصيل البيبلوغرافية
| العنوان: |
Wet Cleaning/Etching of NiAl Thin Film |
| المؤلفون: |
Le, Quoc Toan, Gül Arslan, Esen, Fundu, Kevin, Soulie, Jean Philippe, Altamirano-Sanchez, Efrain |
| المصدر: |
Diffusion and Defect Data Part B: Solid State Phenomena; August 2023, Vol. 346 Issue: 1 p341-345, 5p |
| مستخلص: |
The effect of various chemical solutions and mixtures on the etch characteristics, roughness change, and surface composition of NiAl, Al, and Ni films were investigated. Both HCl solution (1.82%) and NH4OH (0.6 and 1.45%) solutions were found to have a detrimental effect on NiAl film in terms of material etching (4-point probe results) and surface roughness change (AFM). Within the concentration range applied, adding H2O2 into the HCl or NH4OH solutions resulted in a significant increase of the etching of the NiAl film. A correlation was observed between the magnitude of etching and increase in surface roughness suggesting that a preferential etching occurred, most likely of grain boundary. Experimental results showed that in the case of 1.82% HCl-H2O2 mixture, NiAl surface can be protected up to 240 s of immersion with the use of a corrosion inhibitor such as triazole (TA). |
| قاعدة البيانات: |
Supplemental Index |
