التفاصيل البيبلوغرافية
| العنوان: |
Low-Temperature Synthesis of WSe2by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons |
| المؤلفون: |
Nibhanupudi, S. S. Teja, Roy, Anupam, Chowdhury, Sayema, Schalip, Ryan, Coupin, Matthew J., Matthews, Kevin C., Alam, Md Hasibul, Satpati, Biswarup, Movva, Hema C. P., Luth, Christopher J., Wu, Siyu, Warner, Jamie H., Banerjee, Sanjay K. |
| المصدر: |
ACS Applied Materials & Interfaces; May 2024, Vol. 16 Issue: 17 p22326-22333, 8p |
| مستخلص: |
Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the growth temperatures can be lowered below the back-end-of-line (BEOL) processing temperatures, the Si transistors can interface with 2D devices (in the back end) to enable high-density heterogeneous circuits. Such configurations are particularly useful for neuromorphic computing applications where a dense network of neurons interacts to compute the output. In this work, we present low-temperature synthesis (400 °C) of 2D tungsten diselenide (WSe2) via the selenization of the W film under ultrahigh vacuum (UHV) conditions. This simple yet effective process yields large-area, homogeneous films of 2D TMDs, as confirmed by several characterization techniques, including reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and different spectroscopy methods. Memristors fabricated using the grown WSe2film are leveraged to realize a novel compact neuron circuit that can be reconfigured to enable homeostasis. |
| قاعدة البيانات: |
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