Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design

التفاصيل البيبلوغرافية
العنوان: Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design
المؤلفون: Mukherjee, C, Marc, F., Couret, M, Fischer, G, Jaoul, M, Celi, D., Aufinger, K, Zimmer, T., Maneux, C.
المساهمون: Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Innovations for High Performance Microelectronics (IHP), STMicroelectronics [Crolles] (ST-CROLLES), Infineon Technologies AG [München], European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Fregonese, Sebastien, TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns - TARANTO - - H20202017-04-01 - 2021-02-28 - 737454 - VALID, Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)
المصدر: European Microwave Week Workshop Recent advances in SiGe BiCMOS: technologies, modelling & circuits for 5G, radar & imaging
European Microwave Week Workshop Recent advances in SiGe BiCMOS: technologies, modelling & circuits for 5G, radar & imaging, Sep 2019, Paris, France
بيانات النشر: HAL CCSD, 2019.
سنة النشر: 2019
مصطلحات موضوعية: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
الوصف: International audience
اللغة: English
URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4f4f20823a73f509554903b8dc21b51c
https://hal.science/hal-02386290
رقم الأكسشن: edsair.dedup.wf.001..4f4f20823a73f509554903b8dc21b51c
قاعدة البيانات: OpenAIRE