Thin-film morphology of inkjet-printed single-droplet organic transistors using polarized Raman spectroscopy: effect of blending TIPS-pentacene with insulating polymer

التفاصيل البيبلوغرافية
العنوان: Thin-film morphology of inkjet-printed single-droplet organic transistors using polarized Raman spectroscopy: effect of blending TIPS-pentacene with insulating polymer
المؤلفون: James, D.T., Kjellander, B.K.C., Smaal, W.T.T., Gelinck, G.H., Combe, C., McCulloch, I., Wilson, R., Burroughes, J.H., Bradley, D.D.C., Kim, J.S.
المصدر: ACS Nano, 12, 5, 9824-9835
سنة النشر: 2011
مصطلحات موضوعية: inkjet printing, TS - Technical Sciences, Industrial Innovation, morphology, Raman spectroscopy, HOL - Holst, pentacene, Mechatronics, Mechanics & Materials, Materials, organic transistors
الوصف: We report thin-film morphology studies of inkjet-printed single-droplet organic thin-film transistors (OTFTs) using angle-dependent polarized Raman spectroscopy. We show this to be an effective technique to determine the degree of molecular order as well as to spatially resolve the orientation of the conjugated backbones of the 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pentacene) molecules. The addition of an insulating polymer, polystyrene (PS), does not disrupt the p-p stacking of the TIPS-Pentacene molecules. Blending in fact improves the uniformity of the molecular morphology and the active layer coverage within the device and reduces the variation in molecular orientation between polycrystalline domains. For OTFT performance, blending enhances the saturation mobility from 0.22 ± 0.05 cm2/ (V·s) (TIPS-Pentacene) to 0.72 ± 0.17 cm2/(V·s) (TIPS-Pentacene:PS) in addition to improving the quality of the interface between TIPS-Pentacene and the gate dielectric in the channel, resulting in threshold voltages of ~0 V and steep subthreshold slopes. © 2011 American Chemical Society.
اللغة: English
تدمد: 9824-9835
URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::609d7172b055549fc2c1613ce7a48a4d
http://resolver.tudelft.nl/uuid:f3d42dd9-8f90-447d-83dc-5b621d69a97e
حقوق: OPEN
رقم الأكسشن: edsair.dedup.wf.001..609d7172b055549fc2c1613ce7a48a4d
قاعدة البيانات: OpenAIRE