High quality single crystal recrystallization of thin 4H-SiC films deposed by PVD techniques, a way for new emerging fields
| العنوان: | High quality single crystal recrystallization of thin 4H-SiC films deposed by PVD techniques, a way for new emerging fields |
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| المؤلفون: | Usureau, Elise, Vuillermet, Enora, Lazar, Mihai, Andrieux, Aurore, Jacquemot, Alexandre |
| المساهمون: | Lazar, Mihai, Lumière, nanomatériaux et nanotechnologies (L2n), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), Université de Technologie de Belfort-Montbeliard (UTBM)-Université de Bourgogne (UB)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), MICROTEST |
| المصدر: | 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland |
| بيانات النشر: | HAL CCSD, 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics] |
| الوصف: | International audience |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::66b076e7f860269f7a8e882bbec86243 https://hal.science/hal-03856621 |
| رقم الأكسشن: | edsair.dedup.wf.001..66b076e7f860269f7a8e882bbec86243 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |